| http://www.w3.org/ns/prov#value | - ce having dummy cells and semiconductor device having dummy cells for redundancyUS65840124 Jun 200224 Jun 2003Btg International Inc.Electrically alterable non-volatile memory with N-bits per cellUS66808674 Feb 200320 Ene 2004Hitachi, Ltd.Semiconductor deviceUS67144555 Jul 200230 Mar 2004Btg International Inc.Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus
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