| http://www.w3.org/ns/prov#value | - According to a preferred embodiment of the present invention, provided is a method for depositing a phosphorus doped silicon oxide film, comprising the steps of: loading a wafer into a chemical deposition device chamber; introducing a flow of carrier gas (e.g., helium gas) into the chamber and throttling the pressuring of the chamber to a first target pressure; heating the wafer to a target temper
|
