| http://www.w3.org/ns/prov#value | - According to another embodiment of the present invention, provided is a method for depositing a phosphorus doped silicon oxide film onto a substrate using a twin chamber sub-atmospheric chemical deposition device (SACVD), comprising the steps of: loading a first wafer into a first chamber of the SACVD device and a second wafer into a second chamber of the SACVD device; starting the flow of a carri
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