| http://www.w3.org/ns/prov#value | - According to another aspect of the invention, a MOSFET is fabricated by a process which includes: forming a trench at a first surface of a semiconductor substrate, the substrate including dopant of a first conductivity type; depositing a mask layer over the first surface, the mask layer lining the walls and floor of the trench; removing a portion of the mask layer adjacent the floor of the trench,
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