| http://www.w3.org/ns/prov#value | - According to still another aspect of the invention, there is provided a ferroelectric memory in which a capacitor element using a ferroelectric film and an MOS transistor are integrated on the same semiconductor substrate, in which a lower electrode of the capacitor element is a high-concentration diffused layer serving as a source or a drain of the MOS transistor and is constructed, in a self-ali
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