| http://www.w3.org/ns/prov#value | - ckness of 1 to 10 nm. [0076] Further, in the invention described above, a method of manufacturing a semiconductor device is characterized in that the rare gas element is one kind or a plurality of kinds of element selected from the group consisting of He, Ne, Ar, Kr, and Xe. [0077] Further, in the invention described above, a method of manufacturing a semiconductor device is characterized in that
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