| http://www.w3.org/ns/prov#value | - According to the present invention, the foregoing and other advantages are achieved in part by an anti-fuse of a semiconductor device, the anti-fuse comprising an active region in a semiconductor substrate; a channel region adjacent to the active region in the substrate; a gate oxide layer on a main surface of the substrate above the channel region; and a conductive gate on the gate oxide layer, t
|
