| http://www.w3.org/ns/prov#value | - Accordingly, there is a need for a method that provides for a better interface between a silicon substrate and the metal oxide layer, that is simple to manufacture, controllable, has suppressed fringing effects in MOSFET devices, and suitable for mass production. [0007] Accordingly, it is a purpose of the present invention to provide for a method of fabricating a thin, stable silicate interface wi
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