| http://www.w3.org/ns/prov#value | - ; c) a step to selectively form a conductive gate electrode body on said first gate insulator film; d) a step to remove said first gate insulator film on said semiconductor substrate except the region where the gate electrode body is formed and to form a second gate insulator film where said first gate insulator film is removed, whose thickness is different from that of said first gate insulator f
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