| http://www.w3.org/ns/prov#value | - A photoresist 34 is formed on the whole surface of the SOI substrate 1 by spin coating and then is patterned, by exposing and developing with a predetermined photomask, in such a manner as to leave only on a portion which will be a lightly doped n region 31 of the surface silicon layer 3 shown in FIG. 1.
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