| http://www.w3.org/ns/prov#value | - The process continues with the doping of n-well barrier 41 with an element of Group V of the Periodic Table, such as phosphorus or arsenic and implanting with a concentration ranging from 1013 to 1015 atoms/cm2 and with an energy ranging from 250 to 400 keV. The n-well barrier has a thickness ranging from 50 to 250 nm.
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