| http://www.w3.org/ns/prov#value | - In either case, an insulating film such as a film of silicon oxide, silicon oxynitride, or silicon nitride oxide, which contains hydrogen, and is formed using a silane gas or the like as a source gas by a chemical vapor deposition method such as a plasma CVD method, a low pressure CVD method, or an atmosphere pressure CVD method can be employed.
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