| http://www.w3.org/ns/prov#value | - Subsequently, by using the first resist pattern 61 as a mask, first ion beams 74 including boron (B) are ion implanted at acceleration energy of 50 keV and a dose of 1???1012 cm???2, thereby forming a plurality of p-type low concentration impurity regions 32 in the n-type upper silicon layer 30 a.
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