About: http://webisa.webdatacommons.org/61974637

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention relates generally to semiconductor devices and more particularly to semiconductor devices in which the gate electrodes are composed of polysilicon with dopant depletion.
http://www.w3.org/ns/prov#wasQuotedFrom	google.co.uk