| http://www.w3.org/ns/prov#value | - 20090088002METHOD OF FABRICATING A NITROGENATED SILICON OXIDE LAYER AND MOS DEVICE HAVING SAME - A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region.
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