About: http://webisa.webdatacommons.org/6258653

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http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	In an embodiment of the present invention, the oxidation resistant mask is a silicon nitride or silicon oxynitride film formed to a thickness between 30-1000 ???. [0071] Next, as shown in FIG. 9B, the semiconductor b
http://www.w3.org/ns/prov#wasQuotedFrom	google.com