PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • An insulated-gate field-effect transistor according to claim 9, wherein each of said source/drain doped regions is a double-doped region formed in a self-aligned manner with respect to said side wall insulating film.
http://www.w3.org/ns/prov#wasQuotedFrom
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