| http://www.w3.org/ns/prov#value | - FIG. 14 is a graph showing the subthreshold characteristics of MOS transistors formed on monocrystalline silicon substrates, which graph shows the characteristics when a gate oxide film formed with Kr/O2 high density plasma at a substrate temperature of 400??? C. and a conventional gate oxide film formed by about 900??? C. thermal oxidation are used as the gate insulating films;
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