| http://www.w3.org/ns/prov#value | - for using dynamic cell plate sensing in a DRAM memory cellUS20090207681 *Feb 19, 2008Aug 20, 2009Micron Technology, Inc.Systems and devices including local data lines and methods of using, making, and operating the same* Cited by examinerNon-Patent CitationsReference1Endoh et al., 2.4F2 Memory Cell Technology with Stacked-Surrounding Gate Transistor (S-SGT) DRAM, IEEE Transactions on Electron De
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