| http://www.w3.org/ns/prov#value | - Then, the gate electrode 14 is used as a mask to obliquely implant an n-type impurity such as phosphorus, for example, in a dose of about 1013 /cm2 at an angle of about 45??? with respect to the surface of the semiconductor substrate 11, thereby forming a pair of low-concentration n-type impurity layers 15c and 16c (FIG. 8B).
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