| http://www.w3.org/ns/prov#value | - In the process of forming the APS cell structure 10 of FIG. 2, STI trench regions 41 are first formed in a bulk semiconductor substrate including, for example, Si, SiGe, SiC, SiGeC, GaAs, InP, InAs and other semiconductors, or layered semiconductors such as silicon-on-insulators (SOI), SiC-on-insulator (SiCOI) or silicon germanium-on-insulators (SGOI).
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