About: http://webisa.webdatacommons.org/6942201

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com