| http://www.w3.org/ns/prov#value | - A method as in claim 2 wherein the polysilicon control gate comprises silicided polysilicon and further including, for each polysilicon select line, a metal line running substantially parallel to and overlying the polysilicon select line and having a contact formed between said metal line and said polysilicon select line every N cells in said row, where N is an integer.
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