| http://www.w3.org/ns/prov#value | - A method of forming the stack layer 32 is by utilizing sputtering or cathodic arc evaporation to deposit a layer 34 of refractory metal such as zirconium or titanium followed by reactive sputtering or reactive cathodic arc evaporation to deposit a layer 36 of refractory metal nitrogen and oxygen containing compound or metal alloy nitrogen and oxygen containing compound.
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