| http://www.w3.org/ns/prov#value | - As the material of gate electrode constituting the field-effect transistor of the present invention, metals such as gold, platinum, chromium, palladium, aluminum, indium, molybdenum and the like, inorganic materials such as polysilicon, amorphous silicon, tin oxide, indium oxide, indium-tin oxide (ITO) and the like and organic materials such as polyaniline, polythiophene and the like can be used.
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