| http://www.w3.org/ns/prov#value | - Hydrogen-generating CRISP techniques using catalyzing-reactant combinations such as SiH4/F2, B2H6/F2, or PH3/F2 are also useful for removing residual oxygen, nitrogen, carbon, tin, lead, aluminum, sulfur, selenium, and other elements that have volatile hydrides from a surface of a semiconductor.
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