| http://www.w3.org/ns/prov#value | - Using monolayer deposition processes as described above, cobalt-doped indium-tin oxide device structures can be formed on a single substrate using CMOS processing equipment.The memory device 510 is shown in FIG. 5 including an array of memory cells 512, with row circuitry 514 such as address circuitry, sense amplifiers, etc.
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