| http://www.w3.org/ns/prov#value | - Thus, at the point of time (state of FIG. 8) when the etching step of the gate insulating film (silicon nitride oxide film) is ended, the film on the front surface side of the substrate is completely removed except the portions which are masked with the gate electrodes, and the silicon nitride oxide film 812 remains as it is on the back surface and the side surface of the substrate.
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