| http://www.w3.org/ns/prov#value | - According to this embodiment, as shown in FIG. 36B, the process is required for depositing the polycrystal silicon film 161 in such a manner as to contact the upper surface of the insulating film 154, each side wall of the insulating film in the contact hole 155 and the upper surface of the device forming region 153 on the bottom of the contact hole.
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