PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The present invention relates to a semiconductor device including a memory cell having a composite gate structure or a semiconductor device including a stacked memory cell capacitor and a method of fabricating the same.
http://www.w3.org/ns/prov#wasQuotedFrom
  • google.com