| http://www.w3.org/ns/prov#value | - Referring now to FIG. 2C, after definition of the antifuse material layer 34 and the upper barrier layer 36, a second cap layer 38, formed from a material such as SiN, SiC, or other etch-stop layer having a low dielectric constant, having a thickness in the range of from about 10 nm to about 200 nm is blanket deposited over the exposed surface using conventional deposition techniques.
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