| http://www.w3.org/ns/prov#value | - The SDE implantation for the PMOS FinFET structure 300 can include doping SDE 356 with a p-type dopant such as boron (B) using an ion implantation at a dose of approximately 5???1014 atoms/cm2 to form an p-type doping concentration of approximately 2???1019 atoms/cm3 to a depth of approximately 25 nm.
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