| http://www.w3.org/ns/prov#value | - After the passivation layer 122 is formed by depositing and etching an inorganic material such as SiNx or SiOx, or an organic material such as BCB (benzocyclobutene) (S4), the storage capacitor line 105 and the data bus line 102 are coupled to each other electrically by depositing a transparent metal oxide such as ITO on the holes of the gate insulator 119, the semiconductor layer 112, and the dat
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