| http://www.w3.org/ns/prov#value | - forming a gate oxide layer of less than 10 ??? on a semiconductor substrate; forming a first layer over the gate oxide layer; forming a second layer over the first layer, forming a third layer over the second layer, the third layer including nitrogen such that, when formed directly on the first layer causes stresses between the first layer and the third layer, but the second layer securing to reli
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