| http://www.w3.org/ns/prov#value | - A further aspect of the present invention is a method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) Nx Oy :Hz by PECVD on a substrate under dynamic, non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen at
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