| http://www.w3.org/ns/prov#value | - f fabricating high voltage deviceUS843201218 Mar 201130 Apr 2013Cree, Inc.Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameUS849282715 Mar 201123 Jul 2013Cree, Inc.Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistorsUS853606610 May 201017 Sep 2013Cree, Inc.Methods of forming SiC MOSFETs with high inv
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