| http://www.w3.org/ns/prov#value | - After the polysilicon fill 580 has been removed to this level, thick isolating layers 340 and 360 are formed along the trench upper side wall portions 660. these thick isolating layers 340 and 360 are formed by chemical-vapor-deposition of a conformal isotropic isolating layer, such as silicon oxide, followed by an isotropic etch (e.g. RIE) that removes the horizontal portions of the oxide without
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