| http://www.w3.org/ns/prov#value | - forming a first semiconductor layer of a first conductivity type and having a first surface; forming an active region over the first semiconductor layer, the active region including at least two quantum well layers separated by a barrier layer, wherein one of a quantum well layer and the barrier layer is a graded layer formed from a III-Nitride semiconductor alloy of InxAlyGa1???x???yN where 0???x
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