| http://www.w3.org/ns/prov#value | - film mainly containing silicon which is to be a gate insulating film 404 is formed after cleaning the surface of the silicon film with etchant including hydrofluoric acid. [0113] Then, a known conductive film, herein a laminated film of tantalum nitride and tungsten is formed and etched to have a desired shape, thereby forming gate electrodes (gate wirings) 405 a and 405 b. [0114] Next, an impuri
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