| http://www.w3.org/ns/prov#value | - Of course, the gate insulating film is not limited to the silicon oxynitride film and thus another insulating film including silicon may be used as a single layer or a laminate structure. [0101] Then, as shown in FIG. 3A, a first conductive film 207 a having a film thickness of 20 to 100 nm and a second conductive film 207 b having a film thickness of 100 to 400 nm are laminated on the gate insula
|
