| http://www.w3.org/ns/prov#value | - Of course, the gate insulating film is not limited to thesilicon oxynitride film and another insulating film including silicon may be used.A contact connected with the light shielding film of the lower portion is formed and then a first conductive film 515 having a film thickness of 20 nm to 100 nm and a second conductive film 516 having a film thickness of 100 nm to 400 nm arelaminated (FIG. 4D).
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