| http://www.w3.org/ns/prov#value | - After the resist pattern 17 is removed, a resist is again applied and radiation-exposure and development are followed to form a resist pattern 18 in a region other than a region where device isolation is to be built-in, as shown in FIG. 3F. Parts of the thermally oxidized film 14 and the SiGe layer 12 on a surface of the substrate where device isolation regions are to be formed are removed by mean
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