| http://www.w3.org/ns/prov#value | - DETAILED DESCRIPTION OF THIE PREFERRED EMBODIMENTS OF THE INVENTION [0020] A first embodiment of the present invention is a method for forming a siloxan polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of: (i) vaporizing a silicon-containing hydrocarbon compound to produce a material gas for siloxan polymer, said silicon-containing hydrocarbon having t
|
