| http://www.w3.org/ns/prov#value | - A first aspect of the present invention is a method of fabricating a semiconductor structure, comprising: forming one or more devices in a silicon-on-insulator substrate, the substrate comprising a buried oxide layer between an upper silicon layer and a lower silicon layer and a pre-metal dielectric layer on a top surface of the upper silicon layer; forming a first set of wiring levels over the pr
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