PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • An indium gallium arsenide tunnel junction, having an effective dopant concentration of 7???1018 cm-3 is grown in apparatus such as shown in FIG. 2 under preferred conditions set out herein.
http://www.w3.org/ns/prov#wasQuotedFrom
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