| http://www.w3.org/ns/prov#value | - In some embodiments, the gate comprises a material having a work function greater than the intrinsic work function of n-type silicon which is about 4.1 eV, and preferably greater than about 4.25 eV, including for example greater than about 5 eV. Representative gate materials include p-type poly, TiN, Pt, and other high work function metals and materials.
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