| http://www.w3.org/ns/prov#value | - The wafer was then transferred to the CVD Al chamber where 900 ??? of Al was deposited on the restored TiN. Finally, the wafer was moved into the PVD Al chamber where 9000 ??? of Al was deposited using 2 kW of power for about 260 seconds at a wafer temperature of about 450??? C. Electron micrographs show good step coverage and void free fill of contacts, trenches, vias, and other patterns.
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