About: http://webisa.webdatacommons.org/8560936

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The other oxide film 805 of the film structure 806 is formed to a film thickness of for example 100 nm and provided as a gate oxide film on the basis that the polysilicon film 804 will be utilized as a buried electrode.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com