| http://www.w3.org/ns/prov#value | - Thus, a crystallized semiconductor film 756 can be obtained (FIG. 16C). [0141] In order to remove an impurity such as metal included in the crystalline silicon film, gettering shown in FIG. 17 is performed, which is especially effective for reducing the metal with the catalytic action, which is added intentionally in the crystallization process, to a concentration of 1???1017 /cm3 or less.
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