| http://www.w3.org/ns/prov#value | - The front gate conductor 48 is formed on the gate dielectric 46 utilizing a conventional deposition process such as, for example, CVD or PECVD. The front gate conductor 48 may comprise a doped Si-containing layer, i.e., doped polySi or doped SiGe, a conductive metal, an alloy including a conductive metal, a conductive metal silicide, a conventional metal nitride or any combination thereof.
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